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Freescale Semiconductor Technical Data
MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured.
Document Number: MRF6S9060N Rev. 4, 8/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. * Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 21.4 dB Drain Efficiency -- 32.1% ACPR @ 750 kHz Offset -- - 47.6 dBc in 30 kHz Bandwidth GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (921 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.5% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (921 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 63% * Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Integrated ESD Protection * 225C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. * TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S9060NR1 MRF6S9060NBR1
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880 MHz, 14 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC MRF6S9060NR1
CASE 1337 - 04, STYLE 1 TO - 272 - 2 PLASTIC MRF6S9060NBR1
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS Tstg TC TJ
Value - 0.5, +68 - 0.5, + 12 - 65 to +150 150 225
Unit Vdc Vdc C C C
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
(c) Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
MRF6S9060NR1 MRF6S9060NBR1 1
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Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 60 W CW Case Temperature 80C, 14 W CW Symbol RJC Value (1,2) 0.77 0.88 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
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Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Symbol IDSS IDSS IGSS Min -- -- -- Typ -- -- -- Max 10 1 1 Unit Adc Adc Adc Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 A) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.5 Adc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
On Characteristics VGS(th) VGS(Q) VDS(on) 1 -- -- 2 2.9 0.18 3 -- 0.4 Vdc Vdc Vdc
Dynamic Characteristics Coss Crss Ciss -- -- -- 33 1.4 106 -- -- -- pF pF pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg., f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps D ACPR IRL 20.5 30.5 -- -- 21.4 32.1 - 47.6 - 15.3 23.5 -- - 45 -9 dB % dBc dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(continued)
MRF6S9060NR1 MRF6S9060NBR1 2 RF Device Data Freescale Semiconductor
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Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 21 W Avg., f = 921 - 960 MHz, GSM EDGE Signal Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 -- -- -- -- -- 20 46 1.5 - 62 - 78 -- -- -- -- -- dB % % dBc dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 60 W, f = 921 - 960 MHz Power Gain Drain Efficiency Input Return Loss Gps D IRL P1dB -- -- -- -- 20 63 - 12 67 -- -- -- -- dB % dB W
Pout @ 1 dB Compression Point (f = 940 MHz)
MRF6S9060NR1 MRF6S9060NBR1 RF Device Data Freescale Semiconductor 3
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B1 R1 VBIAS + C9 RF INPUT + C7 R2 R3 C8 L1 Z10 Z1 C1 C2 C3 C4 C5 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C6 Z9 C10 DUT C11 L2 Z11
B2 + C15 C16 + C17 + C19
R4
VSUPPLY
C18 RF Z15 OUTPUT
Z12
Z13
Z14 C14
C12
C13
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Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
0.215 0.221 0.500 0.460 0.040 0.280 0.087 0.435
x 0.065 x 0.065 x 0.100 x 0.270 x 0.270 x 0.270 x 0.525 x 0.525
Microstrip Microstrip Microstrip Microstrip Microstrip x 0.530 Taper Microstrip Microstrip
Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB
0.057 x 0.525 Microstrip 0.360 x 0.270 Microstrip 0.063 x 0.270 Microstrip 0.360 x 0.065 Microstrip 0.170 x 0.065 Microstrip 0.880 x 0.065 Microstrip 0.260 x 0.065 Microstrip Taconic RF - 35 0.030, r = 3.5
Figure 1. MRF6S9060NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S9060NR1(NBR1) Test Circuit Component Designations and Values
Part Ferrite Bead Ferrite Bead 47 pF Chip Capacitors 0.8 - 8.0 pF Variable Capacitors, Gigatrim 3.0 pF Chip Capacitor 15 pF Chip Capacitors 10 F, 35 V Tantalum Capacitors 100 F, 50 V Electrolytic Capacitor 13 pF Chip Capacitors 3.9 pF Chip Capacitor 0.56 F Chip Capacitor 470 F, 63 V Electrolytic Capacitor 12.5 nH Inductor 1 k, 1/4 W Chip Resistor 560 k, 1/4 W Chip Resistor 12 , 1/4 W Chip Resistor 27 W, 1/4 W Chip Resistor Description Part Number 2743019447 2743021447 ATC100B470JT500XT 27290 ATC100B3R0JT500XT ATC100B150JT500XT T491D106K035AT MCHT101M1HB - 1017 - RH ATC100B130JT500XT ATC100B3R9JT500XT ATC700A561MT150XT 477KXM063M A04T - 5 CRCW12061001FKEA CRCW12065600FKEA CRCW120612R0FKEA CRCW120627R0FKEA Manufacturer Fair - Rite Fair - Rite ATC Johanson ATC ATC Kemet Multicomp ATC ATC ATC Illinois Capacitor Coilcraft Vishay Vishay Vishay Vishay B1 B2 C1, C8, C14, C15 C2, C4, C13 C3 C5, C6 C7, C16, C17 C9 C10, C11 C12 C18 C19 L1, L2 R1 R2 R3 R4
MRF6S9060NR1 MRF6S9060NBR1 4 RF Device Data Freescale Semiconductor
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C7
R2 B1 R3
C19 VDD C16 C17
VGG
R1
B2 C8
R4
C9 L1 C1 C2 C3 C5 C6
C15 L2 CUT OUT AREA C11 C10
C18
C12 C13 C14
C4
TO-270/272 Surface / Bolt down
Figure 2. MRF6S9060NR1(NBR1) Test Circuit Component Layout
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TYPICAL CHARACTERISTICS
VDD = 28 Vdc, Pout = 14 W (Avg.), IDQ = 450 mA N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 Gps 21.4 ACPR 21.2 21 20.8 ALT1 20.6 840 850 860 870 880 890 900 910 f, FREQUENCY (MHz) -65 920 IRL -50 -55 -60 -45 ACPR (dBc), ALT1 (dBc) D, DRAIN EFFICIENCY (%) 22 21.8 Gps, POWER GAIN (dB) 21.6 40 D 35 30
-8 -12 -16 -20 -24
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 14 Watts Avg.
21.6 VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 450 mA 21.4 N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 21.2 21 Gps ACPR 20.6 20.4 20.2 20 840 850 860 870 880 890 900 IRL ALT1 -40 -48 -56 -64 920 ACPR (dBc), ALT1 (dBc) 20.8 -32 -4 -8 -12 -16 -20 D 50 48 46 44
910
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg.
23 22 IDQ = 675 mA 550 mA 450 mA 350 mA 20 225 mA 19 18 17 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -10 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements -20
21
-30
IDQ = 225 mA
-40
350 mA
-50 450 mA 550 mA -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 675 mA
300
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6S9060NR1 MRF6S9060NBR1 6 RF Device Data Freescale Semiconductor
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Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, IDQ = 450 mA, f1 = 880 MHz -20 f2 = 880.1 MHz, Two-Tone Measurements -30 -40 -50 -60 5th Order -70 -80 1 7th Order 10 100 300 IMD, INTERMODULATION DISTORTION (dBc) -10 0 VDD = 28 Vdc, Pout = 60 W (PEP) IDQ = 450 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz
-20 -30 3rd Order -40 -50 -60 7th Order -70 0.05 0.1 5th Order
3rd Order
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
TWO-TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products versus Output Power
56 55 54 Pout, OUTPUT POWER (dBm) 53 52 51 50 49 48 47 46 45 44 22 23 24 25 26 27
Figure 8. Intermodulation Distortion Products versus Tone Spacing
P3dB = 50 dBm (150 W)
Ideal
P1dB = 49.1 dBm (100 W) Actual
VDD = 28 Vdc, IDQ = 450 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 880 MHz 28 29 30 31 32 33 34
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 55 45 35 25 15 5 -5 1 10 Pout, OUTPUT POWER (WATTS) AVG. Gps TC = 25_C 85_C -30_C 25_C -75 -85 VDD = 28 Vdc, IDQ = 450 mA f = 880 MHz, N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 D 25_C -35 ALT1 85_C -45 -30_C 25_C ACPR -55 -65 -25 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc)
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power
MRF6S9060NR1 MRF6S9060NBR1 RF Device Data Freescale Semiconductor 7
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TYPICAL CHARACTERISTICS
22 21.5 Gps, POWER GAIN (dB) 21 20.5 85_C 20 19.5 19 18.5 18 1 10 Pout, OUTPUT POWER (WATTS) CW D VDD = 28 Vdc IDQ = 450 mA f = 880 MHz 100 40 30 20 10 0 TC = -30_C 25_C Gps -30_C 25_C 85_C 50 80 70 60
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
22 21 20 19 18 17 16 15 14 13 12 11 10 0 10 20 30 40 50 60 IDQ = 450 mA f = 880 MHz 28 V VDD = 24 V 32 V
70 80 90 100 110 120 130 140
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 14 W Avg., and D = 32.1%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 13. MTTF Factor versus Junction Temperature MRF6S9060NR1 MRF6S9060NBR1 8 RF Device Data Freescale Semiconductor
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Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -3.6 -2.9 -2.2 -1.5 -0.7 0 0.7 1.5 2.2 2.9 3.6 1.2288 MHz Channel BW .. ... ..... . .. .............................. ............ ............. . . .. . . . . . . . . . . . . . . . . . . -ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . . . ............ ........... ...... .... ........ ..... ... . ....... ....... .. ... ....... . .... .... .. . . .. ......... ......... ... . ..... ...... ....... .. ..... . ..... ... ... . .... .... . ..... .... . ..... . .... ......... . .. .. . ...... .... ....... .. ........ -ACPR in 30 kHz +ACPR in 30 kHz .............. . . .. . . ... .... .......... ..... . ............... . ......... .... ........... Integrated BW Integrated BW .. ...... ............ . . ...... ... . .. .. ...... ....... ...
Figure 14. Single - Carrier CCDF N - CDMA
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRF6S9060NR1 MRF6S9060NBR1 RF Device Data Freescale Semiconductor 9
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Zo = 5
f = 910 MHz f = 910 MHz Zsource Zload f = 850 MHz f = 850 MHz
VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg. f MHz 850 865 880 895 910 Zsource 0.44 - j0.20 0.44 - j0.07 0.45 + j0.50 0.48 + j0.18 0.52 + j0.29 Zload 2.28 + j0.23 2.18 + j0.33 2.20 + j0.47 2.15 + j0.61 2.00 + j0.68
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
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PACKAGE DIMENSIONS
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MRF6S9060NR1 MRF6S9060NBR1 12 RF Device Data Freescale Semiconductor
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MRF6S9060NR1 MRF6S9060NBR1 14 RF Device Data Freescale Semiconductor
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MRF6S9060NR1 MRF6S9060NBR1 16 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 4 Date Aug. 2008 Description * Listed replacement part and Device Migration notification reference number, p. 1 * Listed MRF6S9060NBR1 as no longer manufactured, p. 1 * Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 11 - 13. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC Standard Package Number. * Replaced Case Outline 1337 - 03 with 1337 - 04, p. 1, 14 - 16. Issue D: Removed Drain - ID label from View Y - Y on Sheet 2. Renamed E2 to E3. Added cross - hatch region dimensions D2 and E2. Added JEDEC Standard Package Number. Issue E: Corrected document number 98ASA99191D on Sheet 3. * Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 * Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150C, p. 1 * Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related "Continuous use at maximum temperature will affect MTTF" footnote added and changed 200C to 225C in Capable Plastic Package bullet, p. 1 * Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added "Measured in Functional Test", On Characteristics table, p. 2 * Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 * Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2 * Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part numbers, p. 4 * Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 8 * Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 8 * Added Product Documentation and Revision History, p. 17
MRF6S9060NR1 MRF6S9060NBR1 RF Device Data Freescale Semiconductor 17
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MRF6S9060NR1 MRF6S9060NBR1
Rev. 18 4, 8/2008 Document Number: MRF6S9060N
RF Device Data Freescale Semiconductor

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